RowScanner: Identification and Prediction of Rowhammer Attacks on DDR3/4
By: Raj Gautam Dutta and Yier Jin
An innovative framework that can identify, predict, and help to mitigate RowHammer attack based on an analytical model of capacitive-coupling vulnerabilities in DDR3 and DDR4 DRAMs.
The framework can achieve two goals: (i) predict whether a given memory chip is vulnerable to a RowHammer attack, thereby enabling the installation of resilient DRAMs in computing systems and (ii) accurately locate vulnerable cells within the DRAM chip if present.
The framework was used to validate the presence/absence of vulnerable memory cells in DRAMs of different manufacturers.